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72. Y.-J. Cho, Y.-H. Lee, W.-S. Kim, B.-K. Kim, K. T. Park and and O. Kim, "Effect of illumination on the hump phenomenon in I-V Characteristics of amorphous InGaZnO TFTs under positive gate-bias stress", Physica Status Solidi A, 2017

 

71. W.-S. Kim, Y.-H. Lee, Y.-J. Cho, B.-K. Kim, K. T. Park and and O. Kim, "Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress", ECS Journal of Solid State Science and Technology, Vol. 6, 2017

 

70. Y.-H. Lee, S. Seok, T.-K. Lee, S.-H. Kim, B.-K. Kim and O. Kim, "Effect of Rising Edge during Dynamic Stress With Duty Ratio in Amorphous InGaZnO Thin Film Transistors", IEEE Journal of Display Technology, Vol. 12, 2016

 

69. K. Lee and O. Kim, "Improving graphene non-volatile memory using self-aligned gate, Electronics Letters, Vol. 52, No. 9, 2016

 

68. S. H. Moon, I. Haruhisa, K. Kim, C. W. Park, H. J. Chung, S. H. Kim, B. K. Kim and O. Kim, Highly Robust Integrated Gate-Driver for In-Cell Touch TFT-LCD Driven in Time Division Driving Method, IEEE Journal of Display Technology, vol 12, 2016

 

67. Dongheon Lee, Kihwan Lee, Kangmin Kim and Ohyun Kim, New Analytical Drain Current Model for the Sub-inear Region of Output Characteristics of Graphene Field Effect Transistors in the Low Carrier Density Limit, Journal of Nanoscience and Nanotechnology, vol 14, 2014

 

66. Sanhyun Ban and Ohyun Kim, Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors, Japanese Journal of Applied Physics, vol 53, 2014

 

65. Byoung-Sun Lee, Booingik Park, Ho-Sung Yang, Jin Woo Han, Chweelin Choong, Jihyun Bae, Kihwan Lee, Woong-Ryeol Yu, Unyong Jeong, U-In Chung, Jong-Jin Park, and Ohyun Kim. Effects of Substrate on Piezoelectricity of Electrospin Ply(vinylidene fluoride)-Nanofiber-Based Energy Generators, ACS Applied Materials & Interfaces, vol 6, 2014

 

64. S. Lee, J. Lee, S. Ban, H. Oh, B. Nam, S. Kim, D. Yim, and O. Kim. A Novel Technique for the Non-Destructive Measurement of EUV Mask Sidewall Angle by using Field-Emission CD-SEM and its Analysis, Journal of Nanoscience and Nanotechnology, vol 13, 2013

 

63. J. Lee, S. Lee, Y. Kim, C. Kim, O. Han and O. Kim. An Optimized Multi-grid Strategy for Accurate Flare Map Modeling with 3D Mask Effect in Extreme Ultraviolet Lithography, Japanese Journal of Applied Physics, vol 51, 201209

 

62. D.Lee, K. Lee, S. Jeong, J.Lee, B. Choi, J. Lee, O.Kim "Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol 51, 201206

 

61. B. Park, J. Lee and O. Kim, "Effect of Glycerol on Retention Time and Electrical Properties of Polymer Bistable Memory Devices Based on Glycerol-Modified PEDOT:PSS", Journal of Nanoscience and Nannotechnology, volume 12, 201201

 

60. Young-Ju Park, Su-Jeong Seok, Sang-Ho Park, and Ohyun Kim, "Embedded Touch Sensing Circuit Using Mutual Capacitance for Actie-Matrx Organic Light-Emitting Diode Display," Japaness Journal of Applied Physics, vol. 50, 2011, 03CC08

 

59. Jungmoo Lee, Ohyun Kim, "Nonvolatile Resistive Memory Device Based on Poly(3,4ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications," Japaness Journal of Applied Physics, vol. 50, 2011, 06GF01.

 

58. Dae-Hyun Moon, Jae-Joon Song, and Ohyun Kim, "Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance," Japaness Journal of Applied Physics, vol. 50, 2011, 06GF16.

 

57. SeungNam Cha, Jung Han Choi, Chan Wook Baik, Hyung Bin Sohn, Joonhyock Choi, Ohyun Kim, and Jong Min Kim, "Perspectives on Nanotechnology for RF and Terahertz Electronics, "IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 59, no. 10, Oct. 2011.

 

56. Jae-Joon Song, Bo Kyoung Choi, En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, Chan-Hoon Park, Yoon-Ha Jeong, and Ohyun Kim, "Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation, "IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol.58, no. 6, Dec. 2011.

55. Dae-hyun Moon, Jae-Joon Song and Ohyun Kim, Effect of Source/Drain Doping Gradient on Threshold Voltage variation in Double Gate Fin Field Effect Transistors as Determined by Discrete Random Doping, Japaness Journal of Applied Physics, vol49, 201006

54. Jae-Joon Song, Dae-hyun Moon and Ohyun Kim Computer Design of Source/Drain Extension Region Profile and Spacer Length in Tri-Gate Body-Tied Fin Field-Effect Transistors with High-k Gate Dielectrics, Japaness Journal of Applied Physics, vol49, No 6, 201006

53. Jun-hwan Lee and Ohyun Kim A Study of Flare Variation in Extreme Ultraviolet Lithography for Sub-22nm Line and Space Pattern, Japaness Journal of Applied Physics, vol49, 201006

52. Heon-jun Ha and Ohyun Kim Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film, IEEE Electron Device Letters, vol31,NO4, 201004

51. Young-ju Park, Su-jeong Seok and Ohyun Kim Voltage Programming Based Pixel Circuit to Compensate Threshold Volage and Mobility using the Natural Capacitance of Organic Light Emitting Diode (OLED), Japaness Journal of Applied Physics, vol49, NO 3, 201003

50. Mijung Kim and Ohyun Kim,  Unipolar Resistance Switching in Polymeric Resistance Random Access Memories, Japanese Journal of Applied Physics, Vol.48, 2009, 06FD02

49. Jaejoon Song, Daehyun Moon, Ohyun Kim, Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors, Japanese Journal of Applied Physics, Vol.48, 2009, 06FD09

48. Myoung-Hoon Jung, Ohyun Kim, Byeong-Koo Kim, Hoon-Ju Chung, Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays, Japanese Journal of Applied Physics, Vol.48, 2009, 052402

47. Mijung Kim, Boongik Park and Ohyun Kim, Unipolar memory operation of resistance random access memory using compliance current controller, Japanese Journal of Applied Physics, Vol.48, 2009, 04C161

46. H.Ha and O.Kim, Unipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film, Japanese Journal of Applied Physics, Vol.48, 2009, 04C169

45. H.Ha and O.Kim, Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film, Appl. Phy. Lett, 93, 2008, 033309

44. Myoung-Hoon Jung, Inho Choi, Ohyun Kim and Hoon-Ju Chung, Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode Displays, Japanese Journal of Applied Physics, Vol.47, 2008, No.11, pp.8275

43. Sanghyun Hong, Ohyun Kim, Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode Displays, Advanced Functional Materials, Vol.18, 2008, No.20, pp.3276

42. Heonjun Ha, Jungmoo Lee, Mijung Kim, Ohyun Kim, Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films, Advances in Science and Techonology, Vol.54, 2008, pp.470

41. Dong jin Lee, Ohyun Kim, Novel Resistance Switching Devices Based on Sub-10 nm Polymer Thin Film, Japanese Journal of Applied Physics, Vol.47, 2008, No.7, pp.5665

40. Dong jin Lee, Ohyun Kim, Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly(o-anthranilic acid) Thin Films, IEEE Electron Device Letters, Vol.29, 2008, No.7, pp.694

39. Heonjun Ha, Ohyun Kim, Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film, Applied Physics Letters, Vol.29, 2008, No.7, pp.33309

38. Sanghyun Hong, Ohyun Kim, High-Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films, Advanced Materials, Vol.20, 2008, No.9, pp.1766

37. Dong jin Lee, Ohyun Kim, Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film, Electronics Letters, Vol.44, 2008, No.9, pp.596

36. Mijung Kim, Seungchel Choi, Moonhor Ree and Ohyun Kim, Current-Dependent Switching Characteristics of PI-diphenyl carbamyl Films, IEEE Electron Device Letters, Vol.28, 2007, No.11, pp.967-969

35. Sanghyun Hong, Ohyun Kim, Seungchel Choi and Moonhor Ree, " Bipolar resistive switching in a single layer memory device based on a conjugated copolymer", Applied Physics letter 91(9), 2007, pp.093517

34. Jiyoun Kim, Shinhyo Cho, Seungchel Choi, Sungsik Baek, Dongjin Lee, Ohyun Kim, Su-Moon Park, Moonhor Ree,  "Novel Electrical Properties of Nanoscale Thin Films of a Semiconducting Polymer: Quantitative Current-Sensing AFM Analysis", Langmuir, June 2007, 23, 9024-9030

33. Sungsik Baek, Dongjin Lee, Jiyoun Kim, Sanghyun Hong, Ohyun Kim, Moonhor Ree, Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin Films Advanced Functional Materials, Vol.28, 2007, pp.2637-2644

32. Myoung-Hoon Jung, Ohyun Kim and Hoon-Ju Chung, Voltage Distribution of Power Source in Large-Size AMOLED Displays, JKPS Vol.48, Jan 2006, pp. S5-S9

31. Joon-ha Park,  and Ohyun Kim, A novel self-aligned poly-Si TFT with field induced drain formed by Damascence process, IEEE Electron Device Letters, Vol.26, 2005, No.4, pp.249-251

30. Seung-Yoon Lee, Tae Geun Kim, Jae Gun Park, Joo Kyoung Song, Ohyun Kim, Chu-WOOf-Yong and Jinho Ahn, Investigation of muItilayer structural changes in phaseand amplitude-defects correction process. J. Vac. Sci. and.Technology B 23(6), Nov/Oec 2005 pp.2866-2869

29. Ki-Soo Kim, Joo Kyoung Song, Moon-Suk Yang, Sang-hyun Hong, Ohyun Kim, PH3 Ion Shower Implantation (ISI) and RTA with Oxide Capping and its Application to the S/D formation of a FD SOI MOSFETs, Japanese Journal of Applied Physics, Vol.43, No.10, 2004, pp.6943-6947

28. Byeong-Koo Kim*, Ohyun Kim, Hoon-Ju Chung, Jae-Won Chang, Yong-Min Ha, Recoverable Residual Image Induced by Hysteresis of TFTs in Active Matrix Organic Light Emitting Diode Displays, Japanese Journal of Applied Physics, Vol.43, No.4A, 2004, pp.L482-L485

27 Jeong-Ah Ahn and Ohyun Kim,.Influence of Field Induced Drain on the Characteristics of Poly-Si TFTs using a Self Aligned Double Spacer Process, Japanese Journal of Applied Physics, Vol.43, No.3, 2004, pp.897-900

26. Seung Yoon Lee, Sung Min Hur, Hyung Joon Kim, Chong Seung Yoon, Young Tae Lee, In Yong Kang, Yong Chae Chung, Moonsuk Yi, Cheol Kyu Bok, Ohyun Kim and Jinho Ahn, "Analysis of Multilayer Structure for Reflection of Extreme-Ultraviolet Wavelength", Japanese Journal of Applied Physics, Vol.41, Part 1, No.6B, 2002, pp.4086-4090

25. Yoon-Jang Kim, Keung-Keun Choi and Ohyun Kim, Effects of localized contamination with copper in MOSFETs, IEEE Electron Device Letters, Vol. 23, No. 8, Aug. 2002

24. Seong-Min Choe, Jeong-Ah Ahn and Ohyun Kim, Fabrication of Laser-annealed Poly-TFT by forming a Si1-XGeX Thermal Barrier, IEEE Electron Device Letters, Vol. 22, No. 3, March 2001, pp.121-123

23. Eunsung Seo, Ohyun Kim, Dose and Shape Modification Proximity Effect Correction for Forward-Scattering Range Scale Features in Electron Beam Lithography Japanese Journal of Applied Physics,. Vol. 39, 2000 pp. 6827-6830

22. Y.Seo, and O.Kim, "Evaluation of effective image blurring factors in the synchrotron proximity X-ray lithography", Japanese Journal of Applied Physics, Vol.39, Part 1, No.12B, 2000, pp.6942-6946

21. Y.Seo, C.Lee, Y.D.Seo, and O.Kim, "Resist profile characteristics caused by photoelectron and Auger electron blur at the resist-tungsten substrate interface in 100nm proximity x-ray lithography", Journal of Vacuum Science and Technology, Journal of Vacuum Science and Technology, B 18(6), Nov./Dec. 2000, pp3349-3353

20. Eunsung Seo, Bo-Kyoung Choi, and Ohyun Kim, "Determination of proximity effect parameters and the shape bias parameter in electron beam lithography", Microelectronic Engineering, Vol.53, June 2000, pp.305-308

19. Yongduk Seo, Kyoungho Lee, Moonsuk Yi, Eunsung Seo, Bo-Kyoung Choi, Ohyun Kim, Ioannis Raptis, Panayiotis Argitis, Michael Hatzakis, "Evaluation of advanced epoxy novolac resist, EPR, for sub 100nm synchrotron x-ray proximity lithography", Microelectronic Engineering, Vol.46, March 1999, pp.461-464

18. M. Yi, Y. Seo, J. Yang, K. Lee, B.K.Choi and Ohyun Kim, "Characterization of Pattern Geometry Effect on the Line End Shortening in X-Ray Lithography", Journal of Vacuum Science and Technology, B 16(6), Nov./Dec. 1998, pp3515-3520

17. M. Yi, E. Seo, Y. Seo, K. Lee and Ohyun Kim, "Characterization of Proximity Correction in 100-nm-Regime X-Ray Lithography", Japanese Journal of Applied Physics, Vol.38, Part 1, No.12B, 1998, pp.131-136

16. Kee-Jong Kim, Won-Kyu Park, Seung-Gyun Kim, Keung-Mun Lim, In-Gon Lim and Ohyun Kim, "A New Charge Pumping Model Considering Bulk Traps in Polysilicon Thin Film Transistor", Solid State Electronics Vol. 42, No. 11, 1998, pp.1897-1903

15. Ohyun Kim and Kee-Jong Kim, "Charge Pumping Investigations on Parasitic Regions in Polysilicon TFT", Electronics Letters, Vol.34, No.8, April 1998, pp.809-811

14. Bo-Kyoung Choi, Jinsuk Yang, Kyoungho Lee and Ohyun Kim, "Characterization of Acid Diffusion for Negative Chemically Amplified Resist using X-Ray Proximity Lithography", Microelectronic Engineering, Vol.41-42, March 1998, pp.301-304

13. Yongduk Seo, Jaewoong Lee, Bo-Kyoung Choi, Hee-Sang Kim and Ohyun Kim, "The Printing Conditions for 0.13m Features in X-Ray Lithography using Pohang Light Source", Microelectronic Engineering, Vol.41-42, March 1998, pp.267-270

12. Young-Bae Park, Seo-Kyu Lee, Ohyun Kim and Shi-Woo Rhee, "Prevention of Oxygen Incorporation in poly-Si1-xGex Deposition with Interfacial Amorphous Silicon Layer", Japanese Journal of Applied Physics, Vol.37, Part 2, No.1A/B, Jan. 1998, pp. L77-L80

11. Kee-Jong Kim and Ohyun Kim, "An Investigation on Grain Boundary Trap Properties Using Staircase Charge-Pumping Technique in Polysilicon Thin-Film Transistors", Journal of Electrochemical Society, Vol.144, No.7, July 1997, pp.2501-2504

10. Kee-Jong Kim and Ohyun Kim, "Identification of Grain-Boundary Trap Properties Using Three-Level Charge-Pumping Techniques in Polysilicon Thin-Film Transistors", Japanese Journal of Applied Physics, Vol.36, Part 1, No.3B, March 1997, pp.1394-1397

9. Seo-Kyu Lee, Seong-Min Choe, Chang-Geun Ahn, Wook-Jin Chung, Young-Kyu Kwon, Bong-Koo Kang and Ohyun Kim, "Low Temperature (<500) Fabrication of CMOS TFT's on Rapid Thermal CVD Polycrystalline Silicon Germanium Films", Japanese Journal of Applied Physics, Vol.36, Part 1, No.3B, March 1997, pp.1389-1393

8. Sung-Keun Chang and Ohyun Kim, "Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistor Using Titanium Disilicide Contacts for Source and Drain", Japanese Journal of Applied Physics, Vol.35 (1996) pp. L538-L540

7. Seo-Kyu Lee, H-G Kim, W-J Chung, B-K Kang and Ohyun Kim, "Fabrication of p-channel MOS FET's in RTCVD Polycrystalline Silicon Germanium films", Japanese Journal of Applied Physics, Vol.35 (1996) pp.919-922

6. Jong-Hoon Park, H-J Park, B-K Choi, Ohyun Kim and S-D Choi, "Simultaneous switching noise analysis of a 16MB×9 DRAM SIMM Memory Module", International Journal of High Speed Electronics and Systems, Vol.6, No.4 (1995) pp.647-668

5. Sung Ho Kang, Sung Soo Lee, Ki Sang Hong and Ohyun Kim, "Digital Range Imaging VLSI Sensor", IEICE Transactions on Information and Systems Vol. E77-D, No. 11 (1994) pp.1302-1305

4. J. Partanen, T. Tuomi, D. Y. Yang, H.-G. Lee, Ohyun Kim and S. Hahn, "Effects of various Pre-Intrinsic and Phosphorus Diffusion Gettering Treatments Upon Quality of Czochralski Silicon Wafer Surface during a Simulated 4MBit Dynamic Random Access Memory Process", Journal of Electrochemical Society, Vol.139, No.5, May 1992, pp.1431-1437

3. P.S.D. Lin, W.P. Hong, Ohyun Kim, R. Bhat, B. Van Der Gaag and H. Schumacher, Self-aligned 0.25 W/Ti/Au gate process for high performance pseudomorphic InAlAs/InGaAs HEMT's", Electronics Letters Vol.26, No.11, May 1990, pp.763-764

2. W.P. Hong, A. Zrenner, Ohyun Kim, J. Harbison, L.T. Florez and F. Derosa, "Characteristics of AlGaAs/GaAs Quantum-Well Delta-Doped Channel FET (QUADFET)", IEEE Trans.  Electron Devices Vol.37, No.8, Aug. 1990, pp.1924-1926

1. W.P. Hong, A. Zrenner, Ohyun Kim, F. Derosa, J. Harbison and L.T. Florez, "Transport Properties of InxGa1-xAs/GaAs Strained Quantum-Well Delta-Doped Heterostructures Grown by Molecular Beam Epitaxy", Applied Physics letter 57(11), Sep. 1990, pp.1117-1119