schematic of a typical top-gated graphene field-effect device can be seen below
the text. The device consists of a graphene layer sandwiched between SiO2
that serve as gate insulators for the back-gate and the top-gate. The graphene
layer is equipped with metallic source and drain contacts.
The graph is conductance of a single layer graphene used as the channel of a field
effect transistor, as a function of the top-gate bias voltage at different
back-gate voltages. This shows an ambipolar characteristic of conductance.
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